Anodic oxidation of p- and p+-type porous silicon: surface structural transformations and oxide formation
| Autor: | M. Schoisswohl, H.J von Berdeleben, János Erostyák, A. Grosman, Eva Vazsonyi, G Jalsovszky, J. L. Cantin, S. Lebib, C. Ortega |
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| Rok vydání: | 1996 |
| Předmět: |
Silicon
Passivation Anodizing Metals and Alloys Oxide Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Porous silicon Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Silicon oxide Spectroscopy Surface states |
| Zdroj: | Thin Solid Films. 276:76-79 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(95)08088-0 |
| Popis: | The transformations induced by the anodic oxidation process on the pore structure and surface states of p-type and p+-type porous silicon have been studied by Rutherford backscattering spectroscopy, local vibrational mode and electron paramagnetic resonance spectroscopy. Surprisingly the anodic oxidation does not lead to a significant formation of silicon oxide in p-type layers; the oxygen is mainly incorporated in silicon back-bonded configurations without perturbation of the initial H surface passivation. On the contrary, in p+-type samples, a uniform oxide layer of a thickness up to 45 A is formed from the very first stages of anodic oxidation. The influence and correlations between the surface structure and the PL efficiency are discussed. |
| Databáze: | OpenAIRE |
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