| Popis: |
Neglecting the effect of generation-recombination (G-R) current, tunneling current, and surface leakage current, a loophole p-n junction current and R 0 A expression is developed in this paper. The R 0 A characteristic varying with temperature and long-wavelength is carried out for 77- 150K temperature range. The curve indicates that the detectors are applicable at 8-10.4micrometers wavelength range for 120K and ever low temperature, but only when the temperature is below 100K, 10~14micrometers wavelength detectors can be used. These results are agree well with that of planar p-n junction's theoretical upper limit. Finally, according with the dependence of G-R current and diffusion current on temperature, the characteristic and function are set up between temperature and composition which equate the generation-recombination current to diffusion current. |
