Development and validation of ANN approach for extraction of MESFET/HEMT noise model parameters
| Autor: | Zlatica Marinkovic, Vera Markovic, Vladica Ɖorđević, Olivera Pronic-Rancic |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering Artificial neural network business.industry Applied Mathematics Transistor 020206 networking & telecommunications Model parameters 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention Wave model Noise law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering MESFET Parasitic extraction Electrical and Electronic Engineering business |
| Zdroj: | Electrical Engineering. 100:645-651 |
| ISSN: | 1432-0487 0948-7921 |
| DOI: | 10.1007/s00202-017-0526-2 |
| Popis: | Most of the transistor noise models refer to the intrinsic device, providing relationships between the transistor noise model parameters and the noise parameters of the intrinsic device. Having in mind that the measured noise parameters correspond to the whole device including the device parasitics, the parameters of the noise models are most often determined by using optimizations in circuit simulators. In this paper, an efficient neural approach for straightforward determination of the noise model parameters, avoiding optimizations, is proposed. A detailed validation of the proposed approach was done by comparison of the measured transistor noise parameters with those obtained by using the extracted noise model parameters for two noise models—the Pospieszalski’s noise model and the noise wave model. |
| Databáze: | OpenAIRE |
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