| Popis: |
A strong reduction of the n+-accumulation layer in n-Hgl-xCdxTe (MCT) samples after UV-irradiation was recently reported l 2 3 4. This effect produced by electron trapping in deep levels of the passivation oxide, lasts several hours at 77 K and even more at 4 K. The sample surfaces are driven into a "quasi" depletion state. Upon UV-illumination we now observed a ten-fold decrease in the carrier lifetime. Obviously this is a consequence of the "quasi" depletion state, in which the electron-holes pairs recombine now with a much shorter time constant characteristical of the depletion regions 5 8. |
