| Popis: |
Films of sulfur-doped synthetic diamond are chemical-vapor-deposited using codoping with sulfur and boron. The sulfur in diamond is detected with particle-induced x-ray emission (PIXE), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy (SIMS). Electrochemical and thermoelectric measurements show that the sulfur-containing diamond films grown in gas phase lean in boron are n-type, whereas those grown with higher boron content are overcompensated, hence, p-type. Electrochemical properties of the n-type diamond films are studied for the first time using methods of electrochemical impedance, open-circuit photopotential, and voltammetric curves in Fe(CN)63-/4- solutions. A mechanism of boron-stimulated sulfur incorporation into diamond and the nature of donors thus formed is discussed. |
Full text from SpringerLink