Noncontact characterization of CdTe doped with V or Ti
| Autor: | C. Eiche, R. Schwarz, K.W. Benz, W. Joerger |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Surface photovoltage education Inorganic chemistry Doping Vanadium chemistry.chemical_element Crystal growth Condensed Matter Physics Cadmium telluride photovoltaics Inorganic Chemistry chemistry Electrical resistivity and conductivity Materials Chemistry Optoelectronics Charge carrier sense organs business human activities Titanium |
| Zdroj: | Journal of Crystal Growth. 161:271-276 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(95)00669-9 |
| Popis: | Time dependent charge measurements (TDCM) are used for noncontact characterization of CdTe crystals doped with vanadium or titanium. Several extensions of the basic technique are presented, which allow for the investigation of the thermal activation energy of the charge carriers, the photosensitivity and the surface photovoltage (SPV). Results of noncontact DLTS measurements show that the formation of defects can change suddenly during the crystal growth process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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