Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel
| Autor: | Yu Chen Lai, Yue Ming Hsin, Ling Yun Kuo, Chih Wei Chen |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Schottky barrier Schottky diode Condensed Matter Physics Electronic Optical and Magnetic Materials Ion Ion implantation Etching (microfabrication) Materials Chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Diode Leakage (electronics) |
| Zdroj: | Journal of Electronic Materials. 50:5453-5461 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 1015 cm−2 and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (RON) because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics. |
| Databáze: | OpenAIRE |
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