High temperature oxidation of Si(100) by neutral oxygen cluster beam: Coexistence of active and passive oxidation areas

Autor:	E. Fort, F. Pradère, M. Châtelet, D. V. Daineka
Rok vydání:	2002
Předmět:	Sticking coefficient Silicon chemistry Sputtering Etching (microfabrication) Drop (liquid) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Oxygen Chemical reaction
Zdroj:	Journal of Applied Physics. 92:1132-1136
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1480111
Popis:	We report the study of Si(100) oxidation by oxygen clusters with an average size of 2000 molecules at substrate temperatures ranging from 850 to 1100 °C. It has been found that at T
Databáze:	OpenAIRE
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