Effect of oxygen incorporation on magnetoresistance in Co/Cu multilayers

Autor:	A. Suzuki, K. Kagawa, Akihiko Okabe, Kazuhiko Hayashi, Hiroshi Kano
Rok vydání:	1994
Předmět:	Secondary ion mass spectrometry chemistry Magnetoresistance Analytical chemistry General Physics and Astronomy chemistry.chemical_element Giant magnetoresistance Mass spectrometry Copper Oxygen Layer (electronics) Cobalt
Zdroj:	Journal of Applied Physics. 75:6540-6542
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.356941
Popis:	The background pressure dependence of magnetoresistance (MR) ratio of Co/Cu multilayer films and the effect of the Fe buffer layer were studied. Secondary ion mass spectrometry (SIMS) measurement of the films and in situ quadrupole mass spectrometry (QMS) analysis in conjunction with background pressure dependence of MR ratio confirmed that the oxidation of Co/Cu gives a crucial influence to the giant magnetoresistance (GMR) effect. The oxidation of Co/Cu weakens the antiferromagnetic coupling, and results in the low MR ratio. The Fe buffer layer absorbs the residual oxygen, and this leads to the increase of the MR ratio. The MR ratio of (Co1 nm/Cu1 nm)100/Fe2.5 nm film deposited under low background pressure and high deposition rate so as to suppress oxidation reached over 80% at RT and 160% at 2 K.
Databáze:	OpenAIRE
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