Pyramidal Si nanocrystals with a quasiequilibrium shape selectively grown on Si(001) windows in ultrathinSiO2films
| Autor: | Motoshi Shibata, Yoshiki Nitta, Ken Fujita, Masakazu Ichikawa |
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| Rok vydání: | 2000 |
| Předmět: | |
| Zdroj: | Physical Review B. 61:7499-7504 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | Pyramidal Si nanocrystals selectively grown on Si(001) windows in ultrathin 0.3-nm-thick ${\mathrm{SiO}}_{2}$ films were studied using in situ scanning tunneling microscopy. In the initial growth stage, {1, 1, 13} facets were formed on the four equivalent sidewalls of the crystal due to the repulsion force between neighboring steps. The crystals were stable with a quasiequilibrium shape when they were surrounded by the ${\mathrm{SiO}}_{2}$ film, but rapidly decayed once the boundary to the ${\mathrm{SiO}}_{2}$ film was removed. This indicates that Si adatoms were confined within the Si window area by the surrounding ultrathin ${\mathrm{SiO}}_{2}$ film and the Si adatom density became stationary. The confinement was enabled by a difference in the adsorption energy of Si adatoms on ${\mathrm{SiO}}_{2}$ and these on Si(001). |
| Databáze: | OpenAIRE |
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