Domain flexibility and pseudospin valve memory cell switching thresholds

Autor:	James M. Daughton, A. V. Pohm, J. M. Anderon, R.S. Beech
Rok vydání:	2000
Předmět:	Physics Flexibility (anatomy) Magnetic domain Field (physics) Thin layer General Physics and Astronomy Sense (electronics) Topology Nuclear magnetic resonance medicine.anatomical_structure Memory cell Domain (ring theory) medicine Magnetic switching
Zdroj:	Journal of Applied Physics. 87:6388-6390
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.372715
Popis:	An analysis shows that for pseudospin valve elements with smooth edges, the sense field becomes ineffective in reducing the switching threshold for the thin layer in the body of the element if the element is wider than about 0.35 μm because of domain flexibility. Experimental results at 1.2 μm element width agree with the analysis. The sense field can lower the thresholds in wider elements if the switching is initiated in the tapered ends or in rough edges.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4db5b503f76fe9f3ed5a4386db783805 https://doi.org/10.1063/1.372715 Zobrazit plný text záznamu