On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology
| Autor: | J.Y.-C. Sun, G. P. Li, M.-R. Chin, J. Zhao, K.Y. Liao |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
inorganic chemicals
Materials science Hydrogen business.industry Annealing (metallurgy) Doping Bipolar junction transistor Electrical engineering chemistry.chemical_element Electromigration Electronic Optical and Magnetic Materials chemistry Optoelectronics Grain boundary Electrical and Electronic Engineering business Boron Common emitter |
| Zdroj: | IEEE Electron Device Letters. 14:4-6 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.215082 |
| Popis: | Boron-doped polysilicon emitter p-n-p transistors show current gain ( beta ) increase after forward current stress and recovery by subsequent low-temperature annealing. The results of isothermal and isochronal annealing suggest that the dissociation of boron-hydrogen pairs is responsible for recovery from the beta increase. Current stress indicates that atomic hydrogen transported to the poly/monosilicon interface and polysilicon grain boundaries by electromigration pairs with boron dopants, thereby reducing surface recombination velocity and increasing beta . > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|