Advanced qualification techniques [microelectronics]
| Autor: | Marty R. Shaneyfelt, T.L. Meisenheimer, Daniel M. Fleetwood, P.S. Winokur |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Engineering Cost effectiveness business.industry Process capability Test method Integrated circuit Statistical process control law.invention Reliability engineering Nuclear Energy and Engineering CMOS law Electronic engineering Microelectronics Electrical and Electronic Engineering business Quality assurance |
| Zdroj: | IEEE Transactions on Nuclear Science. 41:538-548 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.299796 |
| Popis: | This paper demonstrates use of the Qualified Manufacturers List (QML) methodology to qualify commercial and military microelectronics for use in space applications. QML "builds in" the hardness of the product through statistical process control (SPC) of technology parameters relevant to the radiation response, test structure to integrated circuit (IC) correlations, and techniques for extrapolating laboratory test results to low-dose-rate space scenarios. Each of these elements is demonstrated and shown to be a cost-effective alternative to expensive end-of-line IC testing. Several examples of test structure-to-IC correlations are provided and recent work on complications arising from transistor scaling and geometry is discussed. The use of a 10-keV X-ray wafer-level test system to support SPC and establish "process capability" is illustrated and a comparison of 10-keV X-ray and Co/sup 60/ gamma irradiations is provided for a wide range of CMOS technologies. The X-ray tester is shown to be cost-effective and its use in lot acceptance/qualification is recommended. Finally, a comparison is provided between MIL-STD-883, Test Method 1019.4, which governs the testing of packaged semiconductor microcircuits in the DoD, and ESA/SCC Basic Specification No. 22900, Europe's Total Dose Steady-State Irradiation Test Method. Test Method 1019.4 focuses on conservative estimates of MOS hardness for space and tactical applications, while Basic Specification 22900 focuses on improved simulation of low-dose-rate space environments. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|