Fabrication and photoluminescence of P doped ZnO nanobelts by thermal evaporation method

Autor:	Y.S. Li, C.Y. Zang, Chunhe Zang, H.Q. Yang, Z.X. Jia, Yongsheng Zhang, Bin Wang, S.R. Yue
Rok vydání:	2011
Předmět:	Nanostructure Materials science Photoluminescence Exciton Doping Binding energy Analytical chemistry Nanotechnology Atmospheric temperature range Condensed Matter Physics Acceptor Electronic Optical and Magnetic Materials Electrical and Electronic Engineering Single crystal
Zdroj:	Physica B: Condensed Matter. 406:3479-3483
ISSN:	0921-4526
Popis:	Uniform and flat single crystal ZnO:P nanobelts (NBs) were fabricated on Si (1 0 0) substrates by the thermal evaporation method. The growth process, free-catalyst self-assembly vapor-solid (V–S) mechanism, was described and investigated deeply in terms of thermodynamics and kinetics. Then, the photoluminescence (PL) properties of ZnO NBs were studied in a temperature range from 10 to 270 K. At 10 K the recombination of acceptor-bound exciton ( A 0 X ) was predominant in the PL spectrum, and was attributed to the transition of P Zn −2V Zn complex bound exciton. The active energy of A 0 X and acceptor binding energy were calculated to be 17.2 and 172 meV, respectively. The calculated acceptor binding energy of P doped ZnO nanostructure is in good agreement with that of P doped ZnO film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4da01703c6b75ea31e2768212dc1aaab https://doi.org/10.1016/j.physb.2011.06.030 Zobrazit plný text záznamu Full Text from ScienceDirect