Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

Autor:	S. Hamzeloui, F. Ciabattini, A. M. Arabhavi, W. Quan, D. Marti, M. Ebrahimi, O. Ostinelli, C. R. Bolognesi
Rok vydání:	2022
Zdroj:	2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
DOI:	10.1109/bcicts53451.2022.10051732
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4d999167f6fc67db97e3531d04fc47a6 https://doi.org/10.1109/bcicts53451.2022.10051732 Zobrazit plný text záznamu