Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides

Autor:	R. Steins, Hilde Hardtdegen, Y. S. Cho, K. Haberland, J.-T. Zettler, Zdeněk Sofer, Martin Zorn, N. Kaluza
Rok vydání:	2005
Předmět:	Chemistry business.industry Nitride Condensed Matter Physics Temperature measurement Electronic Optical and Magnetic Materials law.invention Optics law Growth parameter Emissivity Optoelectronics Wafer Metalorganic vapour phase epitaxy Anisotropy business Pyrometer
Zdroj:	physica status solidi (b). 242:2581-2586
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.200541099
Popis:	In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4d8d4b4e83d8cdbf9ccd76cda67f439e https://doi.org/10.1002/pssb.200541099 Zobrazit plný text záznamu Plný text