A Ku-band 100 W power amplifier under CW operation utilizing 0.15 µm GaN HEMT technology
| Autor: | Hiroshi Fukumoto, Masaki Kono, Masafumi Nagasaka, Koji Yamanaka, Hiromitsu Utsumi, Susumu Nakazawa, Shoji Tanaka, Shohei Imai, Takuma Torii |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Power-added efficiency business.industry Amplifier Electrical engineering 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences Ku band Broadcasting (networking) Modulation 0103 physical sciences Harmonic 0210 nano-technology business Amplitude and phase-shift keying |
| Zdroj: | 2016 Asia-Pacific Microwave Conference (APMC). |
| DOI: | 10.1109/apmc.2016.7931273 |
| Popis: | In Japan, test satellite broadcasting of UHDTV started in August 2016 and practical broadcasting will begin in 2018. The test broadcasting is being provided in Ku-band (11.7 to 12.75 GHz) with a modulation scheme of amplitude and phase shift keying (APSK). Therefore, due to demands for non-linear characteristics in satellite transponders, we are now studying a 100-W class SSPA for a broadcasting satellite in Ku-band. In this study, we fabricated a GaN driver amplifier (DA) and a GaN high power amplifier (HPA) that both have a second harmonic reflection circuit to achieve high efficiency. They are high efficiency and high output power two-stage amplifiers using 0.15 µm GaN HEMT technology in Ku-band. Measured results showed that the DA achieved power added efficiency (PAE) of 40 % and output power exceeding 60 W under CW operation and that the HPA delivered output power of 100 W. |
| Databáze: | OpenAIRE |
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