| Autor: |
J. Abdou, M. CdeBaca, Bruce M. Green, M. Miller, Haldane S. Henry, C-L. Liu, Darrell G. Hill, Olin L. Hartin, Charles E. Weitzel, Karen E. Moore, F. Clayton, J. Selbee |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
2008 IEEE MTT-S International Microwave Symposium Digest. |
| DOI: |
10.1109/mwsym.2008.4632916 |
| Popis: |
This report presents the DC, pulsed I–V, small signal, and large signal characteristics of Freescale’s 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48V drain bias shows 89 W output power with an associated power density of 7.1 W/mm, linear gain of 17.5 dB, and a power-added efficiency (PAE) of 62%. Analysis of channel temperature over drain bias shows that the maximum channel temperatures at 28 V and 48 V are 107 °C and 245 °C, respectively during saturated RF operation. Data for RF drift over time on a 16.2 mm device show less than 0.2 dB of RF drift for ≫1000 hrs. of testing. This level of RF performance represents a significant ≫4 dB gain and ≫2 W/mm power density improvement over Freescale’s previously reported GaN HFET technology. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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