Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering

Autor:	Dmitry Smirnov, G. Yu. Vasileva, Hennrik Schmidt, Rolf J. Haug, P. S. Alekseev, G. Nachtwei, Yu. B. Vasil'ev, F. Gouider, Yu. L. Ivanov
Rok vydání:	2012
Předmět:	Colossal magnetoresistance Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Solid-state physics Magnetoresistance Graphene Scattering Substrate (electronics) Atmospheric temperature range law.invention Magnetic field Condensed Matter::Materials Science law
Zdroj:	JETP Letters. 96:471-474
ISSN:	1090-6487 0021-3640
DOI:	10.1134/s0021364012190137
Popis:	The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4d600fa09eedf9c1e0f35014dd4c74f4 https://doi.org/10.1134/s0021364012190137 Zobrazit plný text záznamu Plný text ve formátu PDF