A Ferroelectric and Charge Hybrid Nonvolatile Memory—Part II: Experimental Validation and Analysis
| Autor: | Jonathan T. Shaw, Shantanu R. Rajwade, Joshua B. Phelps, Edwin C. Kan, Keith G. Lyon, Kshitij Auluck |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Electrical engineering Oxide Ferroelectricity Flash memory Electronic Optical and Magnetic Materials law.invention Non-volatile memory Capacitor chemistry.chemical_compound chemistry law Logic gate Optoelectronics Electrical and Electronic Engineering Thin film business Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 59:450-458 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2011.2175397 |
| Popis: | Part I of this article introduced the concept and operation of the novel hybrid memory, integrating ferroelectric polarization and nonvolatile charge injection. In Part II, we demonstrate the experimental validation of this hybrid design. One-transistor memory cells were fabricated with polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] as the ferroelectric and HfO2 as the charge trap layer. Hybrid devices showed larger memory window and longer retention time compared to conventional FE-FETs with the same effective oxide thickness. Pulsed measurements were performed on metal-ferroelectric-metal capacitors to estimate switching delay in the P(VDF-TrFE) thin film. Field enhancement in the tunnel oxide resulted in pronounced electron injection from the gate compared with gate injection Flash memory cells. Hybrid devices also exhibited higher program efficiencies against the FE-FET due to the contribution from these injected electrons. The presence of the tunnel oxide in hybrid devices showed over 20t reduction in gate leakage, which resulted in 100 t improvement in cycling endurance against FE-FETs. |
| Databáze: | OpenAIRE |
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