Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy
| Autor: | A. Santoni, K.P. Vijayakumar, M. R. Rajesh Menon, C. Sudha Kartha, Antonella Mancini |
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| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Materials science Metals and Alloys Analytical chemistry Surfaces and Interfaces Band offset Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide X-ray photoelectron spectroscopy X-ray crystallography Materials Chemistry Chemical spray Thin film Pyrolysis |
| Zdroj: | Thin Solid Films. 520:5856-5859 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2012.05.012 |
| Popis: | In 2 S 3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical–chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In 2 S 3 /ITO interface has been determined by XPS resulting in a value of 1.9 ± 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 ± 0.4 eV. |
| Databáze: | OpenAIRE |
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