Compact conduction band model for transition-metal dichalcogenide alloys
| Autor: | Ming-Ting Wu, Ren-Yu He, Shu-Tong Chang, Chia-Feng Lee, Kuan-Ting Chen |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Condensed matter physics Band gap Transistor 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Layered structure Transition metal law 0103 physical sciences Monolayer Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality Electronic band structure Conduction band |
| Zdroj: | Microelectronics Reliability. 83:223-229 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2017.04.022 |
| Popis: | Monolayer transition metal dichalcogenide (TMD) alloys, such as Mo1 − xWxS2, owing to the unique electronic properties of the atomically thin two-dimensional layered structure, can be made into high performance metal–oxide–semiconductor field-effect transistors. The compact conduction band model of effective mass approximation (EMA) with the second nonparabolic correction is proposed for monolayer Mo1 − xWxS2. The three band tight-binding (TB) method is used for calculating the band structure for monolayer TMD alloys such as Mo1 − xWxS2, and a compact conduction band model is precisely developed to fit the band structures of TMD alloys calculated with tight-binding methods for the calculation of electron mobility. The impact of alloys on electron mobility of monolayer Mo1 − xWxS2 is discussed in this study. |
| Databáze: | OpenAIRE |
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