Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2
| Autor: | Kuei-Shu Chang-Liao, Hao-Chieh Lee, Yan-Lin Li |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Amorphous silicon
Materials science business.industry RF power amplifier Electrical engineering Plasma Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Stress (mechanics) chemistry.chemical_compound chemistry Thin-film transistor Gate driver Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Layer (electronics) |
| Zdroj: | Microelectronics Reliability. 55:2178-2182 |
| ISSN: | 0026-2714 |
| Popis: | A hydrogen plasma treatment on the back-channel region of large-sized amorphous silicon thin film transistor (a-Si TFT) with high RF power and optimal process time of 20 s is proposed in this work to effectively reduce off current (I off ) and threshold voltage (V th ) shift under high and low electrical-field stresses. The channel width (W) of large-sized a-Si TFT is ranged from 1000 to 10,000 μm, which are comparable to the realistic TFTs used in the gate driver on array (GOA) of display. It is experimentally found that the mechanism of V th shift (ΔV th ) after high electrical stress is dominated by the defect generation in a-Si layer rather than charge trapping in the gate insulator (GI) layer, which is different from the observation in previous literatures. It could be due to the effects of back-channel treatment (BCT). In addition, after low electrical stresses, the mechanism of ΔV th is dominated by defect generation in a-Si layer, which is consistent with previous reports. |
| Databáze: | OpenAIRE |
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