| Autor: |
Siti Athirah Mohamad Jamali, Hasiah Salleh, Tei Tagg |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 895:505-508 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.895.505 |
| Popis: |
Ferrocene is a well-known electron donor due to its chemical stability and redox behaviour. By introducing azo dye as an acceptor in the system, the characteristics of azo-ferrocene (AF) compound as a semiconductor material have been investigated. A single layer film of AF compound was deposited on an indium tin oxide (ITO) glass substrate by electrochemical method in the potential range of 0.4 V to 0.8 V. Electrical conductivity of the thin film was investigated using a four-point probe and I-V characteristic of the diode was determined via a two-point probe method. AF material showed an average electrical conductivity of 0.246 ± 0.003 Scm-1. The forward current-voltage measurement demonstrated a bias voltage in the range of 0.87 V to 10.0 V, and the backward current-voltage measurement indicated a bias voltage in the range of-0.87 V to-7.0 V. In both forward and backward voltages, the current showed a slow increase beyond the readings of 10.0 V to-7.0 V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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