A 70 GHz Rotary Traveling Wave Oscillator (RTWO) in 65-nm CMOS
| Autor: | Fazle Rabbi, Marvin Aidoo, Goker Ariyak, Monique Kirkman-Bey, Numan S. Dogan, Zhijian Xie |
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| Rok vydání: | 2017 |
| Předmět: |
Engineering
business.industry 020208 electrical & electronic engineering Rotary traveling wave oscillator Electrical engineering 020206 networking & telecommunications 02 engineering and technology Chip Power (physics) CMOS Power consumption 0202 electrical engineering electronic engineering information engineering Inverter business Gain stage NMOS logic |
| Zdroj: | SoutheastCon 2017. |
| DOI: | 10.1109/secon.2017.7925275 |
| Popis: | In this work, the design and implementation of a 70 GHz Rotary Traveling Wave Oscillator (RTWO) is reported. The gain stage of the oscillator is implemented using a cross-coupled NMOS-PMOS pair instead of the conventional cross-coupled all NMOS or inverter pair. The circuit is fabricated in a standard 65 nm CMOS process with an occupied chip area of 0.95 × 0.6 mm2. Power consumption and output power are 13.33 mW and −6.6 dBm respectively. Compared to traditional gain stage implementation with using cross-coupled inverter pair, proposed design achieves less power consumption. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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