Layered compound substrates for GaN growth
| Autor: | Kok Pin Ho, Akiyoshi Yamada, Katsuhiro Akimoto, Takayuki Akaogi, Takahiro Maruyama |
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| Rok vydání: | 1999 |
| Předmět: |
Reflection high-energy electron diffraction
Chemistry business.industry Stereochemistry Dangling bond Condensed Matter Physics Inorganic Chemistry symbols.namesake Residual stress Materials Chemistry symbols Optoelectronics Lamellar structure Mica van der Waals force business Raman spectroscopy Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. :332-335 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(98)01342-6 |
| Popis: | A feasibility study on layered compound substrates such as MoS 2 and mica for GaN growth was carried out. GaN films were successfully grown on MoS 2 by plasma enhanced molecular beam epitaxy and the crystal quality of GaN on MoS 2 was compared with that on Al 2 O 3 . The optical and structural properties, surface flatness and residual stress in GaN films on MoS 2 were remarkably improved compared with that on Al 2 O 3 substrate. These results suggest that MoS 2 , which has no dangling bonds on the surface and a lattice mismatch of 0.9%, has high potentiality for use as a substrate for GaN growth. The crystal quality of GaN on a mica substrate which has a lattice mismatch of 60% was not so good. The importance of lattice matching even on using layered compound substrates is suggested. |
| Databáze: | OpenAIRE |
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