Resonant photothermal bending spectroscopy at variable temperature 25–150 °C and its application to hydrogenated microcrystalline silicon films

Autor:	T. Kiriyama, T. Kunii, K. Mori, Shuichi Nonomura, Norimitsu Yoshida, J. Kitao
Rok vydání:	2003
Předmět:	Materials science Photothermal spectroscopy Absorption spectroscopy Extended X-ray absorption fine structure Silicon chemistry Attenuation coefficient Analytical chemistry chemistry.chemical_element Crystalline silicon Absorption (electromagnetic radiation) Instrumentation Temperature coefficient
Zdroj:	Review of Scientific Instruments. 74:881-883
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1517152
Popis:	Resonant photothermal bending spectroscopy (RPBS) at various measurement temperatures has been developed for estimating absorption coefficient (α) spectra of thin film semiconductors. The experimentally obtained sensitivity of RPBS was about ten times larger than nonresonant PBS. In vacuum, this technique has been applied to estimate the α spectrum of hydrogenated microcrystalline silicon (μc-Si:H) films at the measurement temperatures from 25 to 150 °C. It is demonstrated that the temperature coefficient of an indirect optical absorption at 1.2–1.8 eV caused by Si microcrystallite is almost the same as that of single crystalline silicon, and the temperature coefficient of below-gap absorption intensity is negative. The reason for the negative temperature coefficient and the energy level of the localized state resulting in the below gap absorption are discussed.
Databáze:	OpenAIRE
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