Reactive plasma spraying of MoSi2 using an Ar-10%CH4 powder carrier gas

Autor:	Richard G. Castro, Harriet Kung, P.W. Stanek
Rok vydání:	1994
Předmět:	Materials science Mechanical Engineering Metallurgy Intermetallic chemistry.chemical_element Condensed Matter Physics Microstructure Oxygen Carbide chemistry.chemical_compound chemistry Mechanics of Materials Getter Hot isostatic pressing Silicon carbide General Materials Science Carbon
Zdroj:	Materials Science and Engineering: A. 185:65-70
ISSN:	0921-5093
DOI:	10.1016/0921-5093(94)90928-8
Popis:	Plasma spraying of MoSi 2 using an Ar-10%CH 4 powder carrier gas mixture was investigated as a way of incorporating carbon and carbide particles into spray deposits of MoSi 2 which could subsequently getter SiO 2 after elevated-temperature exposure. After hot isostatic pressing (HIP) at 1800°C and 206 MPa for 1 h a decrease in oxygen from approximately 2580 to 750 ppm resulted in the spray deposits of MoSi 2 produced with the ArCH 4 powder gas carrier. A factor of 3 increase in yield strength was observed in these deposits when compared to conventional hot-pressed MoSi 2 matrix. The temperatures between 1100 and 1400°C. This increase was attributed to a decrease in SiO 2 in the MoSi 2 matrix. The presence of SiC particles was identified in as-sprayed deposits of MoSi 2 and after HIP. Silicon carbide particles in the as-sprayed condition resulted from inflight reactions between MoSi 2 and carbon present in the methane gas. Spray deposits of MoSi 2 , without the use of the ArCH 4 powder carrier gas, were also produced in order to establish a baseline in elevated temperature behavior.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4d0edae87ea2295463dc94fe942515ae https://doi.org/10.1016/0921-5093(94)90928-8 Zobrazit plný text záznamu