Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
| Autor: | A. E. Zhukov, V. S. Mikhrin, A. G. Gladyshev, A. P. Vasil’ev, Elizaveta Semenova, Yu. G. Musikhin, N. N. Ledentsov, A. M. Nadtochy, V. M. Ustinov, N. V. Kryzhanovskaya, Mikhail V. Maximov |
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| Rok vydání: | 2006 |
| Předmět: |
Range (particle radiation)
Materials science Photoluminescence Condensed matter physics business.industry Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Self assembled Quantum dot Excited state Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Wetting layer |
| Zdroj: | physica status solidi (a). 203:1359-1364 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200566178 |
| Popis: | Optical properties of self-organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photoluminescence at 1.55 μm is demonstrated for the sample with 27% In composition in the matrix. The overgrowth with InAIAs layers permits to eliminate the wetting layer states and increase energy separation between QD ground and excited states. |
| Databáze: | OpenAIRE |
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