Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
| Autor: | Wei Ching Huang, Edward Yi Chang, Chia Hsun Wu, Kai Wei Chen, Yen Ku Lin, Yuen Yee Wong, Chung Ming Chu, Wei I. Lee |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Transistor 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Buffer (optical fiber) law.invention Mechanics of Materials law 0103 physical sciences Optoelectronics Sapphire substrate General Materials Science Metalorganic vapour phase epitaxy 0210 nano-technology business Material properties Layer (electronics) Deposition (law) |
| Zdroj: | Materials Science in Semiconductor Processing. 45:1-8 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2016.01.008 |
| Popis: | The effects of different AlN buffer deposition temperatures on the GaN material properties grown on sapphire substrate was investigated. At relatively higher AlN buffer growth temperature, the surface morphology of subsequent grown GaN layer was decorated with island-like structure and revealed the mixed-polarity characteristics. In addition, the density of screw TD and leakage current in the GaN film was also increased. The occurrence of mixed-polarity GaN material result could be from unintentional nitridation of the sapphire substrate by ammonia (NH 3 ) precursor at the beginning of the AlN buffer layer growth. By using two-step temperature growth process for the buffer layer, the unintentional nitridation could be effectively suppressed. The GaN film grown on this buffer layer exhibited a smooth surface, single polarity, high crystalline quality and high resistivity. AlGaN/GaN high electron-mobility transistor (HEMT) devices were also successfully fabricated by using the two-step AlN buffer layer. |
| Databáze: | OpenAIRE |
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