| Autor: |
Hyuck-Chai Jung, T.H. Choi, Hyun-Chul Kim, Jeong-Dong Choi, Seong-Ook Jung, Taejoong Song, H.W. Choi, Hyuck Choo, Jongwook Kye |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Symposium on VLSI Technology. |
| DOI: |
10.23919/vlsit.2019.8776509 |
| Popis: |
High-sigma yield simulation analysis based on accurate SPICE mismatch model is required for high volume product design. Especially for the low power design in sub-7nm technology, the non-Gaussian behavior of the transistor drain currents $(I_{\text{ds}})$ is intensifying due to large mismatch variation. To achieve reliable high-sigma simulation, SPICE mismatch model needs to accurately reflect the non-Gaussian $I_{\text{ds}}$ distribution obtained from the silicon data. Gaussian distribution modeling of channel resistance factor $(R_{\text{ch}_{-}\text{f}})$ and source/drain external resistance $(R_{\text{ext}})$ is proven to be effective to model the skewed Gaussian distribution shape of massive silicon Ids data. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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