Characterization and Modeling of I-V, C-V and Trapping behavior of SiC Power MOSFETs

Autor:	Mohammmad Sajid Nazir, Ahtisham Pampori, Yawar Hayat Zarkob, Anirban Kar, Yogesh Singh Chauhan
Rok vydání:	2023
Zdroj:	2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4cbaad204cb85ce1c59bd2568b694e4c https://doi.org/10.1109/edtm55494.2023.10102944 Zobrazit plný text záznamu