Characterization and Modeling of Gate-Induced-Drain-Leakage
| Autor: | R. Bouchakour, Alexandre Dray, Pascal Masson, M. Minondo, Andre Juge, Fabien Gilibert, Francois Agut, Denis Rideau |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors business.industry Circuit design Electrical engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gate voltage Electronic Optical and Magnetic Materials Computer Science::Hardware Architecture Tunnel effect Electric field MOSFET Optoelectronics Electrical and Electronic Engineering business Quantum tunnelling Voltage Leakage (electronics) |
| Zdroj: | IEICE Transactions on Electronics. :829-837 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1093/ietele/e88-c.5.829 |
| Popis: | We present measurements of Gate-Induced-Drain-Leakage at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage v DG , we also observed Trap-Assisted-Tunneling leakage current at lower v DG . Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-lnduced-Drain-Leakage currents suitable for compact modeling. |
| Databáze: | OpenAIRE |
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