Process modeling for advanced device technologies

Autor:	P. Fleischmann, Patrick H. Keys, M. Stettler, A. Kaushik, Harold W. Kennel, Cory E. Weber, Martin D. Giles, S. S. Botelho, A. Grigoriev, A. D. Lilak, S. Cea, Anurag Chaudhry, N. Voynich, N. Zhavoronok, B. Voinov, Mehandru Rishabh
Rok vydání:	2013
Předmět:	Front and back ends Process modeling Stress effects Process (engineering) Modeling and Simulation Systems engineering Electrical and Electronic Engineering Technology development Process simulation Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Computational Electronics. 13:18-32
ISSN:	1572-8137 1569-8025
DOI:	10.1007/s10825-013-0491-6
Popis:	Front end process simulation is an invaluable tool in assessing current and future process options. This review describes the application of process simulation in modeling geometry, doping and stress effects in advanced logic processes. Continuum and atomistic approaches, both necessary to capture the physics involved with the most advanced options, are discussed. Also detailed are advancements in numerical techniques which enable the efficient and robust simulation necessary to keep pace with technology development.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c8c2d78509aabe22f3cd860f521dd39 https://doi.org/10.1007/s10825-013-0491-6 Zobrazit plný text záznamu Full text from SpringerLink