Impact of Tunnel Etching Process on Electrical Performances of SON Devices

Autor:	V. Caubet, S. Borel, C. Arvet, J. Bilde, D. Chanemougame, S. Monfray, R. Ranica, P. Mazoyer, T. Skotnicki
Rok vydání:	2005
Předmět:	Materials science business.industry General Engineering General Physics and Astronomy Isotropic etching Electronic mail Silicon-germanium Non-volatile memory chemistry.chemical_compound chemistry Etching (microfabrication) Optoelectronics Process control Dry etching business Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 44:5795
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.44.5795
Popis:	The removal of a sacrificial SiGe layer by isotropic etching has been newly improved for silicon-on-nothing (SON) technology by increasing etching selectivity to the Si conduction channel. Still based on CF4 plasma chemistry, power and pressure are adapted in order to decrease etch rate and improve SiGe:Si selectivity. Both electrical characteristics and morphological observations are used to evaluate the characteristics of this technological step in terms of selectivity and uniformity. An original nonvolatile memory (NVM) concept based on this process will illustrate the interest in such etching development.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c7c890c2551f3e1ca80e851901192c9 https://doi.org/10.1143/jjap.44.5795 Zobrazit plný text záznamu