| Autor: |
S.A. Maranowski, J.-W. Huang, Nathan F. Gardner, Herman C Chui, Michael R. Krames, P.N. Grillot |
| Rok vydání: |
1999 |
| Předmět: |
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| DOI: |
10.1016/s0080-8784(08)62488-6 |
| Popis: |
Publisher Summary This chapter focuses on the development and performance of aluminum gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs). The AlGaInP quaternary alloy system is widely used for visible wavelength optical devices such as lasers and light-emitting diodes (LEDs). AlGaAs direct bandgap red LEDs, first as absorbing substrate (AS) devices and later as transparent substrate (TS) devices, grown by liquid phase epitaxy (LPE) resulted in improved efficiencies of ∼10 lm/W (∼14% radiant efficiency). These were the first LED devices to take advantage of the efficient double heterostructure (DH) design and made outdoor applications such as red traffic-signal lights and automobile brake lighting a possibility. AlGaInP is an important optoelectronic material for LED and visible laser diode applications. Recent advances in GaN technology have provided efficient blue and green emitters, which make full color displays possible. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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