Sputtering of III–V semiconductors under argon atom and ion bombardment
| Autor: | A.V. Lunev, Yu. Kudriavtsev, I. P. Soshnikov, N.A. Bert |
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| Rok vydání: | 1997 |
| Předmět: |
Nuclear and High Energy Physics
Argon Physics::Instrumentation and Detectors Chemistry business.industry Surface binding chemistry.chemical_element Ion bombardment Ion Condensed Matter::Materials Science Semiconductor Physics::Plasma Physics Sputtering Yield (chemistry) Atom Atomic physics business Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :115-118 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/s0168-583x(96)01111-1 |
| Popis: | III–V semiconductors sputtering under argon neutral and ion projectiles with energies from 150 to 600 eV was investigated. It is shown that the dependency on energy of sputtering yield is well described by the Sigmund-Falcone and Haff-Switkowski models in Yudin's approximation. It analyses the relation of the surface binding, atomization and amorphization energies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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