Analysis of interfaces in Bornite (Cu 5 FeS 4 ) fabricated Schottky diode using impedance spectroscopy method and its photosensitive behavior
| Autor: | Sayantan Sil, Mrinmay Das, Rajkumar Jana, Dirtha Sanyal, Partha Pratim Ray, Joydeep Datta, Joydeep Dhar, Soumi Halder, Arka Dey |
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| Rok vydání: | 2018 |
| Předmět: |
Electron mobility
Materials science business.industry Mechanical Engineering Schottky diode Thermionic emission 02 engineering and technology Semiconductor device 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Space charge 0104 chemical sciences Dielectric spectroscopy Mechanics of Materials Optoelectronics General Materials Science 0210 nano-technology business Diode DC bias |
| Zdroj: | Materials Research Bulletin. 106:337-345 |
| ISSN: | 0025-5408 |
| Popis: | In this report, we have synthesized Bornite (Cu5FeS4) material by hydrothermal synthesis technique. The interface characteristics of Al/Cu5FeS4/FTO Schottky barrier diode (SBD) are investigated by using ac impedance spectroscopy (IS) analysis (under dark condition) and dc current-voltage (I–V) measurements (under dark and light both condition). IS is a powerful tool to identify the interface regions of SBDs. Ac impedance spectra of Al/Cu5FeS4 SBD are recorded in the frequency range 40 Hz-20 MHz during dc bias scanning from -0.6 V to 0.6 V under dark condition. The diode parameter including ideality factor and barrier height is calculated from the conventional I–V measurement based on thermionic emission (TE) theory. Space charge limited current (SCLC) theory has been employed to further exemplify the improved performance of Cu5FeS4 based SBD, which points out that the carrier mobility is enhanced ∼2-fold after irradiation of light. |
| Databáze: | OpenAIRE |
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