Characteristics of a-SiC:H/a-SiGe:H/a-Si:H Thin Film Solar Cells Enhanced by CH4Flow Rates Controlling in P-Layer
| Autor: | Soon Yeol Kwon, Won Ho Son, Tae-Yong Lee, Sie Young Choi, Kwang Mook Park |
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| Rok vydání: | 2014 |
| Předmět: |
Amorphous silicon
Materials science Analytical chemistry General Chemistry Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Indium tin oxide chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition General Materials Science Solar simulator Layer (electronics) Sheet resistance |
| Zdroj: | Molecular Crystals and Liquid Crystals. 602:209-215 |
| ISSN: | 1563-5287 1542-1406 |
| DOI: | 10.1080/15421406.2014.944768 |
| Popis: | We fabricated a a-SiC:H / a-SiGe:H / a-Si:H thin film solar cell by adjusting CH4 flow rate in order to absorb long wavelength of solar spectrum without stacked structures such as triple junctions. The a-SiC:H, a-SiGe:H and a-Si:H layers with sheet resistance 7∼8 ohm/sq were deposited on indium tin oxide (ITO) glass by 13.56 MHz radical-assisted plasma-enhanced chemical vapor deposition (RA-PECVD). The working pressure and substrate temperature were 750 mTorr and 250°C, respectively. The a-SiC:H films for p-layer thickness of 300 A were deposited using 10% CH4 diluted in H2. The thickness of a-SiGe:H for i-layer corresponded to 2000 A. The n-layer was fabricated using 1% PH3 in diluted H2. The optical properties of these films were measured by UV-VIS spectrophotometer. The thickness of the film was estimated by FE-SEM were observation. The various values of Jsc, Voc, FF and conversion efficiency were evaluated by the solar simulator. |
| Databáze: | OpenAIRE |
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