| Autor: |
MOHAMMAD HAYATH RAJVEE, Dr. R. S. Dubey |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Biointerface Research in Applied Chemistry. 11:12761-12768 |
| ISSN: |
2069-5837 |
| DOI: |
10.33263/briac115.1276112768 |
| Popis: |
Titanium-doped zirconium oxide (mixed high-k) has been used as the gate oxide layer for the future generation metal oxide semiconductor devices. This mixed high-k layer was prepared by using Sol-Gel based spin-coated method. This mixed high-k layer’s chemical, structural, and initial electrical properties are investigated thoroughly. It is clearly confirmed that the suitable chemical composition and bond formation of the proposed mixed high-k layer from EDAX and FTIR analysis observations. The XRD spectra strengthened the presence of ZrTiO2. The measured dielectric constant of the proposed mixed high-k layer from the extracted C-V plots has been varying from 29.1 to 37.6 with respect to spin coating from 4000 to 6000 rpm. With lower spin rates, the leakage current is less. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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