Growth of Thin Cadmium Arsenide Films by Magnetron Sputtering and Their Structure
| Autor: | A. V. Kochura, E. A. Pilyuk, A. P. Kuz’menko, S. F. Marenkin, B. A. Aronzon, A. I. Ril, V. S. Zakhvalinskii, Aung Zaw Htet |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Scanning electron microscope General Chemical Engineering Metals and Alloys Analytical chemistry chemistry.chemical_element Cadmium arsenide Sputter deposition Inorganic Chemistry chemistry.chemical_compound symbols.namesake chemistry Materials Chemistry symbols Sapphire Crystallite Raman spectroscopy |
| Zdroj: | Inorganic Materials. 55:879-886 |
| ISSN: | 1608-3172 0020-1685 |
| Popis: | Thin (~50 nm) cadmium arsenide films have been grown by magnetron sputtering on single-crystal silicon and sapphire substrates. Using X-ray diffraction, scanning electron microscopy, atomic force microscopy, and Raman spectroscopy, the composition of the films has been shown to correspond to the Cd3As2 stoichiometry. Along with the α-Cd3As2 phase, the films contained trace levels of the α'-Cd3As2 phase. Annealing at 520 K led to recrystallization and the formation of [112] textured films on single-crystal silicon substrates. In the annealed films, the crystallite size evaluated using the Debye–Scherrer equation was ~30 nm. |
| Databáze: | OpenAIRE |
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