Growth and characterization of mixed polar GaN columns and core-shell LEDs
| Autor: | Martin Mandl, Tilman Schimpke, Jana Hartmann, Andreas Waag, Xue Wang, Uwe Jahn, Martin Dr. Straßburg, Hergo-H. Wehmann, Johannes Ledig |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Characterization (materials science) Metal Core shell law visual_art Phase (matter) Materials Chemistry visual_art.visual_art_medium Sapphire Polar Electrical and Electronic Engineering Light-emitting diode |
| Zdroj: | physica status solidi (a). 212:727-731 |
| ISSN: | 1862-6300 |
| Popis: | The growth mechanisms of selective area growth of GaN microcolumns by metal organic vapor phase epitaxy on patterned SiOx/sapphire templates, are investigated. Both Ga- and N-polar domains within a GaN column are detected. The growth system of mixed polar GaN columns is near reaction limitation, which is quantitatively determined by the Damkohler number. The major part of the mixed polar GaN columns is N-polar. However, the Ga-polar domains increase the vertical growth rate of the whole column. The strain status of the columns is almost totally relaxed. Core–shell LED structures were realized on the mixed polar GaN columns. The optical properties of the core–shell LEDs were characterized. |
| Databáze: | OpenAIRE |
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