GeAs as an emerging p-type van der Waals semiconductor and its application in p–n photodiodes

Autor:	Jung Ho Kim, Gang Hee Han, Byoung Hee Moon
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Bioengineering General Chemistry Electrical and Electronic Engineering
Zdroj:	Nanotechnology. 34:315201
ISSN:	1361-6528 0957-4484
DOI:	10.1088/1361-6528/acd1f5
Popis:	van der Waals (vdW) layered materials have shown great potential for future optoelectronic applications owing to their unique and variable properties. In particular, two-dimensional layered materials enable the creation of various circuital building blocks via vertical stacking, e.g. the vertical p–n junction as a key one. While numerous stable n-type layered materials have been discovered, p-type materials remain relatively scarce. Here, we report on the study of multilayer germanium arsenide (GeAs), another emerging p-type vdW layered material. We first verify the efficient hole transport in a multilayer GeAs field-effect transistor with Pt electrodes, which establish low contact potential barriers. Subsequently, we demonstrate a p–n photodiode featuring a vertical heterojunction of a multilayer GeAs and n-type MoS2 monolayer, exhibiting a photovoltaic response. This study promotes that 2D GeAs is a promising candidate for p-type material in vdW optoelectronic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c570c53ce47c8be324024a1ca06f9c7 https://doi.org/10.1088/1361-6528/acd1f5 Zobrazit plný text záznamu