Effect of annealing on structure and optical properties of Ga5Se95 films
| Autor: | F.S.H. Abu-Samaha, I.T. Zedan, M.M. El-Nahass |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Diffraction
Materials science Annealing (metallurgy) business.industry Analytical chemistry Binary compound Molar absorptivity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Tetragonal crystal system chemistry.chemical_compound Optics chemistry Crystallite Electrical and Electronic Engineering Thin film business Refractive index |
| Zdroj: | Optics & Laser Technology. 44:621-625 |
| ISSN: | 0030-3992 |
| DOI: | 10.1016/j.optlastec.2011.09.009 |
| Popis: | To investigate the effect of annealing on the structural and optical properties of a binary compound Ga5Se95, thin films of Ga5Se95 have been deposited on quartz substrates at room temperature by the thermal evaporation technique. X-ray diffraction patterns showed that the films before and after annealing at 573 K have polycrystalline texture and exhibit tetragonal structure. The dependences of the optical constants, the refractive index n and extinction coefficient k were studied in the spectral range of 200 nm to 2500 nm. The normal dispersion of the refractive index of the films could be described using the Wemple–DiDomenco single-oscillator model. Analysis of absorption index data reveals that as-deposited Ga5Se95 films has indirect transitions with optical energy gap of 1.685 eV. |
| Databáze: | OpenAIRE |
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