CuInS2–TiO2 heterojunctions solar cells obtained by atomic layer deposition
| Autor: | Marian Nanu, Liesbeth Reijnen, Albert Goossens, Joop Schoonman, Ben Meester |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Annealing (metallurgy)
Vapor pressure Chemistry Inorganic chemistry Metals and Alloys Surfaces and Interfaces Atmospheric temperature range Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Atomic layer deposition symbols.namesake Carbon film Chemical engineering law Solar cell Materials Chemistry symbols Thin film Raman spectroscopy |
| Zdroj: | Thin Solid Films. :492-496 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(03)00230-x |
| Popis: | Chalcopyrites are being studied widely as a promising absorber material for high-efficiency, low-cost, thin-film solar cells. The present paper deals with the growth of CuInS 2 thin films by atomic layer deposition. CuInS 2 films are grown on glass, F-doped SnO 2 coated glass, and TiO 2 thin films at a pressure of 2 mbar and in the temperature range of 350–500 °C using CuCl, InCl 3 and H 2 S as precursors. The influence of the process conditions on the structural and the electrical properties is examined. The growth temperature, the purge time and the vapor pressure of the precursors are found to be the decisive parameters. The composition of the thin films is investigated with X-ray diffraction and Raman spectroscopy. Depending on the process conditions single phase CuInS 2 or a mix of Cu x S, CuInS 2 and CuIn 5 S 8 are formed. The effect of annealing the CuInS 2 films in an H 2 S or O 2 atmosphere is studied as well. |
| Databáze: | OpenAIRE |
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