Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

Autor:	S. V. Zablotsky, M. V. Yakushev, N. L. Bazhenov, Sergey A. Dvoretsky, D. V. Marin, V. S. Varavin, K. D. Mynbaev
Rok vydání:	2015
Předmět:	History Materials science Photoluminescence business.industry Annealing (metallurgy) Heterojunction Carrier lifetime Acceptor Computer Science Applications Education Impurity Optoelectronics Charge carrier business Luminescence
Zdroj:	Journal of Physics: Conference Series. 643:012004
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/643/1/012004
Popis:	Temperature dependences of the carrier lifetime and photoluminescence (PL) spectra in Hg1-xCdxTe (0.3 < x < 0.4) epilayers grown on Si substrates (HgCdTe-on-Si) and intended for fabrication of p+-n photodiodes have been studied. It is shown that the as-grown material has a high concentration of recombination centres with energy 30 ÷ 40 meV, which reduces the lifetime. The post-growth annealings, both that converting the material to the p-type and that imitating the activation of an implanted impurity, reduce the concentration of the centres. This manifests itself in an increase in the lifetime, which is especially noticeable after 'activating' annealing and is confirmed by results of the PL studies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c4360ecf7ffe9b7e5e0f7ac5ae246d1 https://doi.org/10.1088/1742-6596/643/1/012004 Zobrazit plný text záznamu