Investigation on the Degradations of Parallel-Connected 4H-SiC MOSFETs Under Repetitive UIS Stresses

Autor:	Hua Mao, Guanqun Qiu, Xiaofeng Jiang, Huaping Jiang, Xiaohan Zhong, Lei Tang, Yifu Zhang, Li Ran, Yuping Wu
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:650-657
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2021.3134139
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c3df8ea04349bce6d6793c2cbb3df47 https://doi.org/10.1109/ted.2021.3134139 Zobrazit plný text záznamu