Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

Autor:	P.P. Pronko, X. Liu, Tibor Juhasz, F.H. Loesel, Gerard Mourou, P.A. VanRompay, C. Horvath
Rok vydání:	1998
Předmět:	Physics Photon Dielectric strength Silicon chemistry.chemical_element Photoionization Dielectric Laser law.invention chemistry law Electric field Ionization Physics::Atomic and Molecular Clusters Physics::Atomic Physics Atomic physics
Zdroj:	Physical Review B. 58:2387-2390
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.58.2387
Popis:	Experimental evidence is presented demonstrating avalanche ionization as the dominant mechanism for dielectric breakdown in silicon with ultrafast laser pulses at above-gap photon energies. Data are presented for pulses between 80 fs and 9 ns at 786 nm and 1.06 \ensuremath{\mu}m. Associated electric fields range from 0.3 to 40 MV/cm. Avalanche ionization coefficients range from ${10}^{10}$ to ${10}^{14} {\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$ and are discussed in relation to semiempirical dc ionization theory and recent ac Monte Carlo calculations. Correlation is obtained between electron collision times and associated ionization rates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c3c2f28a9dcb2b2fb49d0052f145a10 https://doi.org/10.1103/physrevb.58.2387 Zobrazit plný text záznamu