The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics
| Autor: | Paul E. Dodd, Douglas C. Trotter, Nicholas Martinez, Andrew Starbuck, Scot E. Swanson, Christina Dallo, Christopher M. Long, Galen Hoffman, Christopher T. DeRose, Michael Gehl, Andrew Pomerene, Dana Hood, Anthony L. Lentine |
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| Rok vydání: | 2019 |
| Předmět: |
Nuclear and High Energy Physics
Electron mobility Materials science Silicon 010308 nuclear & particles physics business.industry chemistry.chemical_element Radiation RC time constant 01 natural sciences Photodiode law.invention Nuclear Energy and Engineering chemistry Modulation law Absorbed dose 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Dark current |
| Zdroj: | IEEE Transactions on Nuclear Science. 66:801-809 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | In this paper, we test Si vertical-junction disk modulators and waveguide-integrated Ge p-i-n photodiodes (PDs) to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high-energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1-Mrad(Si) exposure. As the bandwidth of the Si disk modulator decreases by 6.5% after 1-Mrad(Si) dose, the bandwidth of the Ge p-i-n PD appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in the p-n junction RC time constant. The Ge p-i-n PD is relatively insensitive to the surface effects, because the absorption happens away from the SiO2–Ge interface and the gamma radiation has a minimal effect on carrier mobility. |
| Databáze: | OpenAIRE |
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