| Autor: |
Hsien-Cheng Tseng, Wei-Min Tu |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
2017 Silicon Nanoelectronics Workshop (SNW). |
| DOI: |
10.23919/snw.2017.8242322 |
| Popis: |
Thermal-management design for power devices by placing the 2D graphene heat spreader (GHS) at the backside of collector-up heteroj unction bipolar transistors (HBTs) is presented. Temperature distribution in the GHS and the application of these spreaders to ameliorate thermal-coupling effects on multi-finger transistors were discussed. Compared to the npn device, the pnp device exhibits greater thermal-stability enhancement results, which are extraordinary and reproducible. Both numerical simulation and experimental measurement were achieved to scrutinize thermal performance of the GHS. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
